| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a relaxed SiGe-on-insulator substrate having improved relaxation, comparatively low defect density, and improved surface quality. SOLUTION: The method includes a step for forming a SiGe alloy layer on a surface of a first single crystal Si layer. The first single crystal Si layer has an interface with an underlay barrier layer having resistance to Ge diffusion. Next, ions are implanted into the structure, the ions forming defects by which mechanical decoupling is achieved at the interface or vicinity of the interface; then a heating step is performed to the structure including the implanted ions, by which mutual diffusion of Ge through the first single crystal Si layer and SiGe layer is achieved; thereby a SiGe layer that is substantially relaxed single crystal and homogenous is formed on the barrier layer. A SiGe-on-insulator having improved properties and a heterostructure including it are also provided. COPYRIGHT: (C)2004,JPO
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