| 发明名称 |
METHOD OF PLASMA TREATMENT |
| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of plasma treatment which establishes a process for controlling the configuration of tungsten. SOLUTION: The configuration of tungsten is controlled by adding N<SB>2</SB>gas into chlorine base gas to produce sidewall deposit on a tungsten sidewall. COPYRIGHT: (C)2004,JPO
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| 申请公布号 |
JP2004039777(A) |
申请公布日期 |
2004.02.05 |
| 申请号 |
JP20020193045 |
申请日期 |
2002.07.02 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KITA TAKESHI;OKUMURA TOMOHIRO |
| 分类号 |
C23F4/00;H01L21/28;H01L21/3065;H01L21/3205;H01L21/3213;H01L23/52;(IPC1-7):H01L21/306;H01L21/320;H01L21/321 |
主分类号 |
C23F4/00 |
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