发明名称 |
FERROELECTRIC ELEMENT AND ITS DESIGN METHOD |
摘要 |
PROBLEM TO BE SOLVED: To enhance a holding characteristic of a ferroelectric element of a structure of a ferroelectric substance capacitor connection to a gate electrode of a field-effect transistor (MIS-FET). SOLUTION: The gate electrode is connected to a first ferroelectric substance capacitor, and a second capacitor which is the ferroelectric substance capacitor which is smaller in a residual polarization than the first capacitor, or is a normal dielectric capacitor having a perovskite structure. COPYRIGHT: (C)2004,JPO
|
申请公布号 |
JP2004039959(A) |
申请公布日期 |
2004.02.05 |
申请号 |
JP20020197034 |
申请日期 |
2002.07.05 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
UEDA MICHIHITO;OTSUKA TAKASHI |
分类号 |
G11C11/22;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L27/105;H01L21/824 |
主分类号 |
G11C11/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|