| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method which can improve an yield by reducing the generation of particles without remarkably reducing productivity. SOLUTION: The plasma treatment method for a semiconductor wafer which uses gases including halogen comprises a step for purging and vacuuming a plasma treatment chamber repeatedly the prescribed number of times at fixed intervals or after a prescribed number of semiconductor wafers are plasma-treated, and/or plasma-treatment dummy wafers. When the number of particles begins to increase, the treatments of purging and vacuuming which are simple and can be done in a short period of time are conducted to extend a period until wet maintenance, resulting in controlling the generation of the particles to the prescribed number without reducing productivity. COPYRIGHT: (C)2004,JPO
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