| 摘要 |
PURPOSE: To improve the number of rewrite frequencies by decreasing the extent of polarization inversion to read a reference cell, in a ferroelectric memory device generating a reference potential by using a reference cell. CONSTITUTION: First, a word line WL1 and a cell plate line CP1 are activated, and the data of a memory cell is outputted to a first bit line BL1. A switch control signal REQ2, a reference word line RWL2, and a reference cell plate line RCP2 are activated to generate a potential for reference in a second bit line BL2. After the switch control signal REQ2 and the reference word line RWL2 are deactivated, a sense amplifier start signal SAE is activated.
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