| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of enhancing capacitance. CONSTITUTION: The first lower electrode(24) is formed on a semiconductor substrate(20) having a contact plug(23). A capacitor sacrificial layer is formed on the first lower electrode(24). Four capacitor holes are formed by selectively removing the capacitor sacrificial layer. The second lower electrode(28) is formed by filling a conductive layer in the four capacitor holes. After removing the capacitor sacrificial layer, a dielectric film and an upper electrode are sequentially formed on the first and second lower electrode.
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