METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to improve the reliability by forming the minimum thickness of a metal layer satisfying a resistance and capping a dielectric on the metal line. CONSTITUTION: A trench is formed on an upper surface of a semiconductor substrate(10). A metal layer(18) is deposited on an upper surface of the resultant structure including the trench. The height of the metal layer(18) is lower than the height of the trench. A capping layer is formed on an upper surface of the metal layer(18). The capping layer is partially removed from the trench by performing a CMP process. The capping layer is formed with an HDP oxide layer(20). The thickness of the HDP oxide layer(20) is about 500 to 1000 angstrom.