| 摘要 |
PURPOSE: A deposition method of a metal thin film is provided to be capable of obtaining a uniform and flat metal thin film while depositing metal film with thin thickness using chemical vapor deposition. CONSTITUTION: In a deposition method of a metal thin film using CVD(Chemical Vapor Deposition), a metal precursor, a reaction gas and an additive for restraining adsorption of metal are used. At this time, the metal thin film(13a) is one selected from group Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Si, Y, Zr, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sb, Ba, La, Hf, Ta, W, Re, Ir, Pt, Au, Hg, Pb, Bi, and Po. Also, the additive is one selected from group consisting of 2R, NHR2, NR3, C1-C10 alkylhydrazine, C2-C10 dialkylhydrazine, triglyme, tetraglyme, alcohol, diol, ketone and ether.
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