| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent bubble defects generated in an HDP(High Density Plasma)-CVD layer as a gap-fill layer. CONSTITUTION: A trench mask pattern(100) is formed on a semiconductor substrate(10) to expose an isolation region. A trench(13) is formed by selectively etching the substrate using the trench mask pattern. An oxide layer(14) is formed on the trench. A thin nitride layer(15) made of LP(Low Pressure) nitride is formed on the oxide layer. A nitride buffer layer(16) made of LP-TEOS is formed on the thin nitride layer. Then, the trench is filled with an HDP-CVD oxide layer(17).
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