METHOD FOR FORMING FIELD OXIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a field oxide layer of a semiconductor device is provided to minimize the generation of a bird's beak by forming a thin pad oxide layer by a cleaning process and by performing an oxide process at a low temperature. CONSTITUTION: The native oxide layer existing on a silicon substrate(11) is eliminated by using a diluted hydrofluoric acid. A pad oxide layer(12) is formed while the surface of the substrate is treated by using a mixed solution of hydrogen peroxide. After a nitride layer(13) is formed on the pad oxide layer, the nitride layer and the pad oxide layer are sequentially patterned. After the exposed silicon substrate is etched by a predetermined thickness, an oxide process is performed at a low temperature to form a field oxide layer(15) in the exposed silicon substrate.