发明名称 |
CHEMICAL MECHANICAL POLISHING EQUIPMENT |
摘要 |
The present invention related to a CMP equipment, compatible with the existing manufacture processes. The CMP equipment of the present invention employs strip polishing platens that can be smaller than the wafer size, so that the layout is compact and the space is effectively utilized, leading to high throughput and efficient production management. The present invention provides a CMP equipment that offers greater flexibility in performing CMP for different fabrication processes through the choices of various polishing pads and/or polishing slurry.
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申请公布号 |
US2004016507(A1) |
申请公布日期 |
2004.01.29 |
申请号 |
US20020064526 |
申请日期 |
2002.07.24 |
申请人 |
HU SHAO-CHUNG;HSU CHIA-LIN;CHEN HSUEH-CHUNG;HSU SHIS-HSUN |
发明人 |
HU SHAO-CHUNG;HSU CHIA-LIN;CHEN HSUEH-CHUNG;HSU SHIS-HSUN |
分类号 |
B24B7/00;B24B37/04;H01L21/304;H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
B24B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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