发明名称 CHEMICAL MECHANICAL POLISHING EQUIPMENT
摘要 The present invention related to a CMP equipment, compatible with the existing manufacture processes. The CMP equipment of the present invention employs strip polishing platens that can be smaller than the wafer size, so that the layout is compact and the space is effectively utilized, leading to high throughput and efficient production management. The present invention provides a CMP equipment that offers greater flexibility in performing CMP for different fabrication processes through the choices of various polishing pads and/or polishing slurry.
申请公布号 US2004016507(A1) 申请公布日期 2004.01.29
申请号 US20020064526 申请日期 2002.07.24
申请人 HU SHAO-CHUNG;HSU CHIA-LIN;CHEN HSUEH-CHUNG;HSU SHIS-HSUN 发明人 HU SHAO-CHUNG;HSU CHIA-LIN;CHEN HSUEH-CHUNG;HSU SHIS-HSUN
分类号 B24B7/00;B24B37/04;H01L21/304;H01L21/306;(IPC1-7):H01L21/306 主分类号 B24B7/00
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