| 发明名称 |
METHOD OF ERASING NONVOLATILE MEMORY CELL USING SOURCE AND CHANNEL REGIONS |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of erasing nonvolatile memory cell by which a group of nonvolatile memory cells can be erased collectively without deteriorating a nonvolatile memory. <P>SOLUTION: This method of erasing nonvolatile memory cell includes a step of impressing a first voltage (-8 V) of a first polarity upon a control gate (406), a step of impressing a second voltage (8 V) of a second polarity upon a bulk region (402), and a step of impressing a third voltage (8 V) of the second polarity upon a source region (408). The magnitude of the second voltage is substantially equal to that of the third voltage. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2004031942(A) |
申请公布日期 |
2004.01.29 |
| 申请号 |
JP20030148336 |
申请日期 |
2003.05.26 |
| 申请人 |
HYNIX SEMICONDUCTOR INC |
发明人 |
WANG HSINGYA A;CHOU KAI-CHENG;RABKIN PETER |
| 分类号 |
G11C16/02;G11C16/16;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
G11C16/02 |
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