| 摘要 |
PURPOSE: A block selection circuit of a flash memory device is provided to select and process a failed block even after being packaged. CONSTITUTION: A selection part(21) includes a programmable and erasable flash memory cell by a voltage condition, and outputs a block selection signal according to an address signal and a selection signal and a state of the flash memory cell. A high voltage pumping part(22) outputs a signal maintaining a high voltage according to the above block selection signal and a clock signal. And a switching part(23) applies a bias to a gate select line and a word line and source select line of the flash memory cell according to an output signal of the above high voltage pumping part.
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