发明名称 |
Method for manufacturing a via hole of a semiconductor device |
摘要 |
<p>A lower barrier layer made of tantalum nitride (19) having a thickness of approximately 25nm is deposited by sputtering on an insulating film (17) inclusive of the sidewall surfaces and the bottom surfaces of a via hole (17a) and an upper-interconnect-forming groove (18a). The sputtering is performed under the conditions where approximately 10kW of DC source power is applied to a target. Thereafter, the DC source power is reduced to approximately 2kW, and approximately 200W of RF power is applied to a semiconductor substrate. Here, the lower barrier layer is subjected to a sputter-etching process employing argon gas at an etching amount of approximately 5nm, so that a part of the lower barrier layer deposited on the bottom surface of the via hole is at least partially deposited on the lower part of the sidewall surface of the via hole.</p> |
申请公布号 |
EP1385202(A2) |
申请公布日期 |
2004.01.28 |
申请号 |
EP20030016803 |
申请日期 |
2003.07.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TARUMI, NOBUAKI;IKEDA, ATSUSHI;KISHIDA, TAKENOBU |
分类号 |
H01L21/3065;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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