发明名称 |
Formation of well-controlled thin SiO, SiN, SiN, SiON layer for multilayer high-K dielectric applications |
摘要 |
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, in which the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof. In one embodiment, the silicon-containing material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.
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申请公布号 |
US6682973(B1) |
申请公布日期 |
2004.01.27 |
申请号 |
US20020147650 |
申请日期 |
2002.05.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PATON ERIC N.;XIANG QI;YU BIN |
分类号 |
H01L21/02;H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/824;H01L21/00;H01L29/76;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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