| 摘要 |
A semiconductor device as well as a method of manufacturing a semiconductor device wherein a wide trench separation band is formed without causing the scooping out of the silicon substrate can be gained.The process is provided with the step of forming a multilayer film on a silicon substrate, the step of patterning the multilayer film and of etching the silicon substrate so as to create a trench, the step of forming an inner wall silicon oxide film on the inner wall surface of the trench, the step of forming a trench oxide layer so as to fill in the trench, the step of polishing the trench oxide layer through CMP polishing so as to expose the silicon nitride layer and the step of etching the trench oxide film, which has undergone the CMP polishing, by a thickness no more than the thickness of the inner wall silicon oxide film.
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