| 摘要 |
PURPOSE: A method for cleaning a wafer is provided to easily eliminate particles and contaminants and increase yield of a device by using DIW(deionized water) rinse through two thin nozzles, a proper nylon brush and high-pressure jet DIW having a pressure of 30-40 kgf/cubic centimeter for a proper interval of time. CONSTITUTION: A wafer(1) is loaded into a chamber for cleaning the back surface of the wafer and is rotated while the wafer is cleaned by injecting H2O2+DIW or only DIW through two nozzles(2,3) for a time interval of 5-10 seconds. DIW is injected for a time interval of 15-25 seconds, and a DIW injecting nozzle(5) and a brush(4) are simultaneously used so that the wafer is cleaned. After DIW of high pressure is injected to the rotating wafer through a DIW injecting nozzle for a time interval of 15-20 seconds, the wafer is rotated in a high speed to be dried.
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