| 摘要 |
PURPOSE: Provided is a base resin for a deep UV(DUV) resist of acetal type, which improves the yield and reduces the cost in the development and production of semiconductors. CONSTITUTION: The base resin for an acetal type DUV resist has the formula I, wherein R is an electron-withdrawing group increasing the acidity and selected from the group consisting of fluorine, chlorine, bromine, iodine, aldehyde, ketone, carboxylate, ester, amide, sulfonate, nitrile and nitro, and each of R2 and R3 is an alkyl or aryl group. The acetal type DUV resist comprising the base resin is used in a lithographic process, wherein the process is performed with an aqueous TMAH solution having the concentration of 2.38% or less, or pure water as a developer.
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