| 摘要 |
PURPOSE: A flash memory device having a buried source line and a fabricating method thereof are provided to reduce the line width of a drain line by burying a source/drain into a semiconductor substrate. CONSTITUTION: A flash memory device having a buried source line includes a field oxide layer(4), a floating gate(8), an oxide layer, a source/drain(12), an insulating layer(14), and a control gate(16). The field oxide layer(4) is formed on an inactive region of a semiconductor substrate(2). The floating gate(8) is formed by inserting a gate insulating layer(6) into the semiconductor substrate(2). The oxide layer is formed on between the floating gate(8) and the semiconductor substrate(2). The source/drain(12) is formed under the oxide layer. The insulating layer(14) is formed on the floating gate. The control gate(16) is formed on the insulating layer(14).
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