| 摘要 |
PURPOSE: A method for improving an etching process for a hard mask, is provided to be capable of improving a CD(Critical Dimension) bias generated at the center and edge portion of a substrate. CONSTITUTION: An etch object layer(12) and a thin film(14) for a hard mask, are sequentially formed at the upper portion of a semiconductor substrate(10). A photoresist pattern(20) having a predetermined shape, is formed at the upper portion of the thin film. A hard mask is formed by carrying out a dry etching process at the thin film using the photoresist pattern as an etching mask. At this time, the dry etching process is carried out by supplying the mixed gas of CF4, CHF3, O2, and Ar. Preferably, the thin film is formed by using a silicon nitride layer, an oxide nitride layer, or an oxide layer.
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