发明名称 |
CIRCUITS FOR CONTROLLING INTERNAL POWER SUPPLY VOLTAGES PROVIDED TO MEMORY ARRAYS BASED ON REQUESTED OPERATIONS AND METHODS OF OPERATING |
摘要 |
An integrated circuit memory device includes a plurality of banks of a memory array and a power line connected to the plurality of banks. A plurality of internal voltage generating circuits are connected in parallel to the power line and are configured to provide internal voltage to the plurality of banks. A control circuit is connected to the plurality of internal voltage generating circuits and is configured to provided the internal voltage to more than one of the plurality of banks during a requested operation performed by fewer than all of the plurality of banks. Related methods are also disclosed.
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申请公布号 |
US2004013024(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20030353497 |
申请日期 |
2003.01.29 |
申请人 |
PARK MIN-SANG |
发明人 |
PARK MIN-SANG |
分类号 |
G11C5/14;G11C8/12;(IPC1-7):G11C8/00;G11C5/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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