| 摘要 |
PROBLEM TO BE SOLVED: To provide a porous silica thin film that has a low relative dielectric constant, is stable and has a mechanical strength sufficiently endurable to a CMP (chemical-mechanical polishing) process in a copper wiring process of a semiconductor element. SOLUTION: A coating composition for producing an electrical insulating thin film comprises a silica precursor containing silicon atoms derived from an alkoxysilane in a specific ratio, a specific organic polymer containing a polyether block copolymer and a specific amount of an organic solvent. COPYRIGHT: (C)2004,JPO
|
