| 摘要 |
In a method of fabricating a semiconductor device according to the present invention, a portion including a prospective electrode contact hole forming region of a patterning insulator film located on a gate electrode of a transistor to be formed with an electrode contact on the gate electrode is selectively simultaneously removed in an etching step for an element isolation film for implementing a self-aligned source structure forming a source line in a self-aligned manner with respect to the gate electrode, for partially exposing the upper surface of the gate electrode. Thus, both of a substrate contact hole and an electrode contact hole can be simultaneously formed without increasing the number of fabrication steps, while the number of masks can be reduced.
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