NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory device which is provided with test circuits aiming to enhance reliability and to provide a method for manufacturing the non-volatile memory device which has a shortened test time and which is aiming to enhance the reliability. SOLUTION: Second switching circuits and test mode controllers for setting test operations are disposed between bit lines placed in correspondence to a plurality of non-volatile memory cells and the ground potential of the circuits. All of the Y-system selection circuits between the bit lines and the memory cells are put into a non-selection state, the second switching circuits are turned on, and the supply of operating voltages and currents toward the bit lines are measured by measuring circuits from first external terminals. COPYRIGHT: (C)2004,JPO