| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi layer wiring substrate with built-in semiconductor device and a manufacturing of the same, in which the strain or deformation is not generated in a semiconductor chip or a wiring substrate, and troubles, such as faulty wirings, deviation in size or the like or formation of voids, are not generated and moisture absorption reflow resistance to heat is improved upon laminating, bonding and integrating a plurality of wiring substrates comprising the substrate on which the semiconductor chip is mounted, and accordingly, fining of wiring pitch is realized, and as a result, stability and reliability in the initial characteristics, as well as operational characteristics of the semiconductor chip or the wiring substrate, are improved. SOLUTION: The multi layer wiring substrate with the built-in semiconductor device is formed of substrates 1-5, in which conductive materials 13, which serve as conductor wirings are formed, are laminated on an insulation base material 11 consisting of PPA resin, while IC chips 6 are mounted on substrates 3, 5 and a protective layer 7 consisting of PC film, is formed so as to cover the upper surfaces and the side surfaces of the IC chips 6. COPYRIGHT: (C)2004,JPO
|
