| 摘要 |
PURPOSE: To provide a semiconductor device, along with its manufacturing method, which has an element isolation structure showing a proper separation characteristics, by filling the inside of a fine groove with an insulating film of proper film quality but without defects, such as voids. CONSTITUTION: The semiconductor device comprises a semiconductor substrate 1 and isolation insulators 2a-2c. Grooves 17a-17c are formed on the main surface of the semiconductor substrate 1. The separation insulators 2a-2c are formed inside the grooves by a thermal oxidation method, and isolate an element-forming region on the main surface of the semiconductor substrate 1. A plurality of oxide films 3a-3c, 4a-4c, 5a-5c, 6b, and 7b are laminates of the isolation insulators 2a-2c.
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