| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device which is more easily and inexpensively manufactured and improves the heat radiation effect. SOLUTION: The power semiconductor device is provided with a power semiconductor element (10), and an insulating substrate (12) for packaging the power semiconductor element; a first radiator (14) for packaging the insulating substrate; a case (20) mounted on the first radiator for surrounding the insulating substrate and the power semiconductor element; a second radiator (28) which faces the power semiconductor element, and is positioned within the case with its peripheral edge in contact with the inner surface of the case; and a gel-state insulating resin (26) which fills a space composed of the first radiator, the case and the second radiator. COPYRIGHT: (C)2004,JPO
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