| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a semiconductor device by effectively utilizing underlayers of bonding pads, while suppressing generation of cracks in the underlayers of the bonding pads. SOLUTION: The semiconductor device 10 comprises a semiconductor substrate 11, bonding pads 12 having connecting regions 12a for electric connection with the outside, a first interlayer insulating layer 13 interposing between the semiconductor substrate 11 and the bonding pads 12, and a metal wiring layer 14 embedded in the first interlayer insulating layer 13. The metal wiring layer 14 is composed of a material having a smaller hardness than that of the first interlayer insulating layer 13. At least a part of the metal wiring layer 14 is overlapped with a connecting region 12a in a laminated direction. In the region of the metal wiring layer 14 with which the connecting region 12a is overlapped, notched parts 30a-30e for penetrating in the laminated direction to separate the metal wiring layer 14 in its layer direction are formed, and a part of the first interlayer insulating layer 13 is filled in the notched parts 30a-30e. COPYRIGHT: (C)2004,JPO |
