| 摘要 |
PROBLEM TO BE SOLVED: To extend the temperature range by improving the linearity of the temperature characteristic of reference voltage at high temperatures. SOLUTION: Two N-type dummy MOS transistors ND1 and ND3 are dummy transistors where gates are connected to sources respectively and drain currents do not flow in respective transistors. The drain diffusion layer of each has the a junction leakage characteristic identical to that of the drain diffusion layer of an N-type dummy transistor N2, and are connected respectively to two nodes 1 and 3. Furthermore, N-type diffusion layers connected to three nodes 1, 2 and 3 including the drain diffusion layers of the two N-type dummy transistors ND1 and ND3 and junction girth ratios or junction area ratios equivalent to the channel dimension ratios 1:1:1 of three P-type MOS transistors P1, P2 and P3. COPYRIGHT: (C)2004,JPO
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