| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an MISFE capable of reducing a leakage current without reducing an on-current or deteriorating short channel characteristics, a circuit using the same and a manufacturing method for the semiconductor device having the MISFE. SOLUTION: The semiconductor device is provided with (a) a gate insulation film formed on the surface of a conductive type semiconductor substrate, (b) a gate electrode provided on the insulation film, (c) a pair of reverse conduction type impurity diffused layer regions in the semiconductor substrate which are formed so as to be partially overlapped on both ends of the gate electrode. In at least one region of the pair of reverse conduction type impurity diffused layer regions, the change of the concentration of reverse conduction type impurities in the vicinity of a boundary surface between the reverse conduction type impurity diffused layer region and the semiconductor substrate when the change is seen from the boundary surface toward the reverse conduction type impurity diffused layer region, the change of the concentration of the same impurities in a part contacted with a channel forming region formed near a surface immediately below the gate electrode is specified so as to be most steep compared with the other part whereby the problem is solved. COPYRIGHT: (C)2004,JPO
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