发明名称 Power semiconductor module
摘要 A power semiconductor module that automatically sets an optimum dead time without being affected by the switching characteristics or driving mode of individual power semiconductor devices. The power semiconductor module includes a pair of IGBTs disposed in an upper and lower arm, respectively, and driving circuits for driving IGBTs. The power semiconductor module includes current detecting circuits and zero current detecting circuits for detecting that the output current of each of the IGBTs has become nearly zero, an inverting circuit, upper arm driving circuit and lower arm driving circuit for generating actual driving signals for each IGBT, using the output signals of the zero current detecting unit and ON commands for the IGBTs of the other arms.
申请公布号 US6678180(B2) 申请公布日期 2004.01.13
申请号 US20010032327 申请日期 2001.12.31
申请人 FUJI ELECTRIC CO, LTD. 发明人 MATSUDA NAOTAKA
分类号 H02M7/537;H02M1/00;H02M7/48;H03K17/08;H03K17/56;(IPC1-7):H02M7/538;H02H7/122 主分类号 H02M7/537
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