| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce leakage current between a gate oxide layer and a dielectric film by using a floating gate with high work function. CONSTITUTION: A plurality of trenches are formed at a semiconductor substrate(102). Isolation layers(112a,112b,112c) are formed in the trench. By depositing a metal film with high work function, such as tungsten and titanium nitride on the resultant structure and patterning, isolated floating gates(114) are formed on the substrate. A dielectric film including metal oxide is formed by oxidation of the surface of the floating gate. A control gate is then formed on the resultant structure.
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