发明名称 |
THIN FILM SEMICONDUCTOR DEVICE, ITS MANUFACTURE AND IMAGE DISPLAY DEVICE |
摘要 |
PURPOSE: To realize a thin film semiconductor device and an image display device in which a TFT having high performance and reduced in the variety of characteristics of the same is formed on an insulation substrate. CONSTITUTION: The thin film semiconductor device is provided with the insulation substrate and an island region of an isolated mono-crystalline thin film provided on the insulation substrate. The isolated island region of mono-crystalline thin film is formed on the whole surface or a specified region of the insulation substrate utilizing an aggregation phenomenon due to the surface tension of molten semiconductor while the active region of a thin film transistor is formed in the island region. |
申请公布号 |
KR20040004039(A) |
申请公布日期 |
2004.01.13 |
申请号 |
KR20030012276 |
申请日期 |
2003.02.27 |
申请人 |
KABUSHIKI KAISHA HITACHI SEISAKUSHO(D/B/A HITACHI, LTD.) |
发明人 |
PARK SEONG KEE;YAMAGUCHI SHINYA;HATANO MUTSUKO;SHIBA TAKEO |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/04;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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