发明名称 THIN FILM SEMICONDUCTOR DEVICE, ITS MANUFACTURE AND IMAGE DISPLAY DEVICE
摘要 PURPOSE: To realize a thin film semiconductor device and an image display device in which a TFT having high performance and reduced in the variety of characteristics of the same is formed on an insulation substrate. CONSTITUTION: The thin film semiconductor device is provided with the insulation substrate and an island region of an isolated mono-crystalline thin film provided on the insulation substrate. The isolated island region of mono-crystalline thin film is formed on the whole surface or a specified region of the insulation substrate utilizing an aggregation phenomenon due to the surface tension of molten semiconductor while the active region of a thin film transistor is formed in the island region.
申请公布号 KR20040004039(A) 申请公布日期 2004.01.13
申请号 KR20030012276 申请日期 2003.02.27
申请人 KABUSHIKI KAISHA HITACHI SEISAKUSHO(D/B/A HITACHI, LTD.) 发明人 PARK SEONG KEE;YAMAGUCHI SHINYA;HATANO MUTSUKO;SHIBA TAKEO
分类号 H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/04;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
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