| 摘要 |
In a semi-conductor light-emitting element, an underlayer is made of a high crystallinity Al-including semi-conducting nitride material of which the FWHM is 90 second or below in X-ray rocking curve. Then, a light-emitting layer is made of a semi-conducting nitride material including at least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements and transition metal elements.
|
