发明名称 DUAL DAMASCENE MULTI-LEVEL METALLIZATION
摘要 A method for forming an interconnect structure, the interconnect structure comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.
申请公布号 KR20040004677(A) 申请公布日期 2004.01.13
申请号 KR20037015743 申请日期 2003.12.01
申请人 发明人
分类号 H01L21/28;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/28
代理机构 代理人
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