| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the exposure of lower portions of a pad region by forming a diffusion barrier layer on the pad region thickly. CONSTITUTION: A semiconductor substrate(11) defined by a cell region(A) and a pad region(B) is prepared. A thin diffusion barrier layer is formed on the cell region(A) and a thick diffusion barrier layer(12) is formed on the pad region(B). After forming an interlayer dielectric(14) on the resultant structure, a via hole and a trench are formed in the cell region, and a via hole is formed in the pad region. By filling a copper film(12) and planarizing, a copper line is formed at the cell region and a bonding wire is formed at the pad region.
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