发明名称 DIELECTRIC STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide capacitors, particularly embeddable capacitors, having high dielectric constant capacitance dielectric materials that are easier to form electrodes on than conventional high dielectric constant capacitance dielectric materials. SOLUTION: Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004002956(A) 申请公布日期 2004.01.08
申请号 JP20020342090 申请日期 2002.11.26
申请人 SHIPLEY CO LLC 发明人 ALLEN CRAIG S;RZEZNIK MARIA ANNA;CAIRNS S MATTHEW
分类号 C04B41/88;C23C18/18;C25D5/54;H01G4/06;H01G4/18;H01G4/20;H01L21/02;H01L21/288;H05K1/16;H05K3/18;(IPC1-7):C25D5/54 主分类号 C04B41/88
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