| 摘要 |
PROBLEM TO BE SOLVED: To highly precisely align a mask and a wafer. SOLUTION: An alignment method of the mask and the wafer is realized in an exposure device where a mask pattern formed on the mask is transferred on a resist layer on the wafer. A first alignment mark M arranged in the mask 32 is constituted of a mark M<SB>X</SB>for detecting the position in the X direction is formed of a plurality of stripes whose longitudinal direction is in the Y direction and arranged in parallel in the X direction and of a mark M<SB>Y</SB>for detecting the position in the Y direction is formed of a plurality of stripes whose longitudinal direction is in the X direction and arranged in parallel in the Y direction. The marks are disposed in the positions of two contiguous sides of a rectangle. In a step for measuring a relative dislocation amount, a horizontal tilt angle of the mark M<SB>X</SB>which is image-picked up and an imaging device is calculated. COPYRIGHT: (C)2004,JPO
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