| 摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection element for suppressing the overshoot of a voltage as much as possible and protecting an LSI by turning on an SCR operation in an extremely short period of time when a surge current is impressed, forming a safe and low-resistance discharge route for a circuit element inside the LSI, and discharging electrostatic discharge current pulses. SOLUTION: The ESD protection element comprises: a first P well region 101 of a P conductivity type formed on a P type epitaxial layer 31 deposited on the surface of a P+ substrate 30 with a prescribed thickness; a first N well 201 of an N conductivity type whose periphery is surrounded by the first P well region 101 in direct contact; first P diffusion regions 121a and 121b and a third P diffusion region 125, all of which are the P conductivity types, and a second N diffusion region 223 of the N conductivity type arranged in the first P well region 101; and a second P diffusion region 123 of the P conductivity type and the first N diffusion region 221 of the N conductivity type arranged in the first N well 201. COPYRIGHT: (C)2004,JPO
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