| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage device in which the switching current of write-wiring is small and dispersion is little. SOLUTION: This method comprises the process of forming a magneto-resistance effect element 20, the process of forming a first insulation film 30 so as to cover the magneto-resistance effect element, the process of forming a coating film 32 so as to cover the first insulation film, the process of exposing the upper surface of the magneto-resistance effect element, the process of forming upper write-wiring 40 on the magneto-resistance effect element, the process of exposing the first insulation film at the side of the magneto-resistance effect element by removing a part or all of the coating film, and the process of forming a yoke structure member 48a so as to cover at least the side part of the upper write-wiring and to be in contact with the exposed first insulation film. COPYRIGHT: (C)2004,JPO |
