ULTRA-THIN TUNGSTEN METAL FILM USED AS ADHERENCE PROMOTER BETWEEN METAL BARRIER LAYER AND COPPER, AND METHOD FOR CLOSELY ADHERING COPPER THIN FILM TO SUBSTRATE USING IT

摘要

PROBLEM TO BE SOLVED: To provide a method for improving the adherence of a copper thin film on a metal and a metal nitride substrate and for depositing tungsten on the metal or the metal nitride substrate. SOLUTION: The method for closely adhering the copper thin film to a substrate in an integrated circuit structure includes a step for forming a substrate including formation of active regions and via holes and grooves for interconnection line structure, a step for depositing a metal barrier layer 22 on the substrate, a step for depositing a tungsten ultra-thin layer 24 on the metal barrier layer, a step for depositing a copper thin film 26 on the tungsten ultra-thin layer, a step for removing excessive copper and tungsten ultra-thin layer up to the level of the metal barrier layer and a step for completing the integrated circuit structure. COPYRIGHT: (C)2004,JPO