发明名称 Internal voltage source generator in semiconductor memory device
摘要 In this circuit, an external voltage source is supplied or down converted in response to a normal operating mode to provide the internal voltage source of a first level to the internal circuit. The external voltage source is converted to a voltage of a second level, lower than the first level, in response to a low consumption power mode having a complementary relation with the normal mode.
申请公布号 US2004004513(A1) 申请公布日期 2004.01.08
申请号 US20020331602 申请日期 2002.12.31
申请人 RHEE SANG-JAE;SIM JAE-YOON;HONG SANG-PYO;CHUN KI-CHUL 发明人 RHEE SANG-JAE;SIM JAE-YOON;HONG SANG-PYO;CHUN KI-CHUL
分类号 G05F1/46;(IPC1-7):G05F1/10 主分类号 G05F1/46
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