发明名称 |
Internal voltage source generator in semiconductor memory device |
摘要 |
In this circuit, an external voltage source is supplied or down converted in response to a normal operating mode to provide the internal voltage source of a first level to the internal circuit. The external voltage source is converted to a voltage of a second level, lower than the first level, in response to a low consumption power mode having a complementary relation with the normal mode.
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申请公布号 |
US2004004513(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20020331602 |
申请日期 |
2002.12.31 |
申请人 |
RHEE SANG-JAE;SIM JAE-YOON;HONG SANG-PYO;CHUN KI-CHUL |
发明人 |
RHEE SANG-JAE;SIM JAE-YOON;HONG SANG-PYO;CHUN KI-CHUL |
分类号 |
G05F1/46;(IPC1-7):G05F1/10 |
主分类号 |
G05F1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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