Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance

摘要

A method for forming an adhesion/barrier liner to improve adhesion and a specific contact resistance of semiconductor wafer metal interconnect including providing a semiconductor wafer having a process surface including at least one anisotropically etched opening extending through at least one dielectric insulating layer and in closed communication with a conductive underlayer surface; pre-heating the semiconductor wafer in a plasma reactor to a pre-heating temperature of at least 400° C.; cleaning the at least one anisotropically etched opening according to a plasma assisted reactive pre-cleaning process (RPC) including a supplying a fluorine containing gas to maintain the plasma; and, blanket depositing at least a first adhesion/barrier layer.