| 摘要 |
PURPOSE: To provide a thin film magnetic storage device with high operation reliability by preventing data from being miswritten to a non-selection memory cell due to magnetic noise. CONSTITUTION: A write drive circuit WWD placed by each write word line WWL supplies a data write current Iww to the write word line WWL of a selected row, and a magnetic field cancel current ¡âIww is supplied to the write word line WWL adjacent to the selected row in a direction opposite to the data write current. Each write drive circuit WWD supplies the data write current Iww by tuning on both driver transistors 101 and 102 and supplies the magnetic field cancel current ¡âIww by turning on only the driver transistor 102.
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