| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent a moat phenomenon, by forming the first isolation layer by a local oxidation of silicon(LOCOS) method, by forming an insulation layer spacer for protecting the edge of the first isolation layer, by forming a trench and by forming the second isolation layer for filling the trench. CONSTITUTION: A stack structure of a pad oxide layer pattern and a nitride layer pattern is formed on a semiconductor substrate(21), exposing an isolation region. The semiconductor substrate is oxidized to form the first isolation layer by using the nitride layer pattern as an oxide mask. The insulation layer spacer for protecting the edge of the first isolation layer is formed on the sidewall of the stack structure. The first isolation layer and the semiconductor substrate are etched to form the first isolation layer pattern(28) and the trench by using the nitride layer pattern and the insulation layer spacer as an etch mask. A buried insulation layer is formed on the resultant structure and is planarized to form the second isolation layer(33) including the first isolation layer pattern on its edge. The nitride layer pattern is eliminated.
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