METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the under-cut of lower portion of a spacer caused by salicide blocking. CONSTITUTION: A gate electrode(23) is formed on a semiconductor substrate(21) having I/O pad. An LDD(Lightly Doped Drain) region(24) is formed in the substrate. An oxide layer and a nitride layer(25) are sequentially formed on the resultant structure. By blanket etching of the nitride layer, a spacer(26a) is formed at both sidewalls of the gate electrode. Then, a source/drain region(27) is formed in the substrate. The spacer(26a) is etched by using salicide blocking mask. The exposed oxide layer is wet-etched. Then, a silicide layer(28) is formed on the exposed gate electrode and the exposed source/drain region.