发明名称 PHOTORESIST STRIPPER COMPOSITION AND WASHING COMPOSITION
摘要 PURPOSE: A photoresist stripper composition, a stripping method of photoresist, a novel oxymethylamine compound, and a washing composition containing the compound for a semiconductor device are provided, to allow a photoresist layer on a substrate, a photoresist layer remaining after etching and a photoresist residue remaining after etching and ashing to be removed easily at a low temperature in a short time. CONSTITUTION: The photoresist stripper composition comprises at least one oxymethylamine compound having an alkoxymethylamine structure or an alkoxymethylamine structure substituted with ether bond-containing substituent. Preferably the oxymethylamine compound is represented by the formula 1, wherein R1 is an alkyl, hydroxyalkyl, aryl, acryl, alkoxyalkyl or aminoalkyl group or an ether bond-containing substituent; R2 is H or an alkyl, acyl, hydroxyalkyl., aryl, allyl, aminoalkyl, alkoxyalkyl, hydroxyl or amino group; R3 is H or an alkyl, acyl, hydroxyalkyl., aryl, allyl, aminoalkyl, alkoxyalkyl, hydroxyl or amino group; and R2 and R3 can form a ring together with the nitrogen atom combined to R2 and R3 if R2 and R3 are a group having 1-8 carbons, respectively. The novel oxymethylamine compound is represented by the formula 7, wherein R4 is an alkyl group of C1-C8; R5 is an alkylene group of C1-C4; and n is an integer of 1-4.
申请公布号 KR20040002455(A) 申请公布日期 2004.01.07
申请号 KR20030013708 申请日期 2003.03.05
申请人 MITSUBISHI GAS CHEMICAL COMPANY INC. 发明人 IKEMOTO KAZUTO;YAMAMOTO YOSHIAKI;YOSHIDA HIROSHI;MARUYAMA TAKETO
分类号 C07C217/08;C11D7/32;C11D11/00;G03F7/42;(IPC1-7):G03F7/42 主分类号 C07C217/08
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