| 摘要 |
PURPOSE: A static random access memory(SRAM) cell is provided to form a capacitor of a logic part by using a local interconnection metal in an SRAM cell part as a lower electrode. CONSTITUTION: An SRAM cell has the logic part and a cell part. The first and second access transistors, the first and second drive transistors and the first and second load transistors are formed on the cell part, including a source/drain region and a gate electrode. A transistor is formed on a substrate(41) of the logic part, including a source/drain region and a gate electrode. The first terminal of the first access, load and drive transistors electrically contacts the gate electrodes of the second load and drive transistors. The first terminal and the first load of the second load and drive transistors electrically contact the gate electrode of the first drive transistor while the load interconnection metal contacts the gate electrode of the logic part. A planarizing insulation layer has a contact hole to expose a predetermined portion of the second terminal of the first and second access transistors, the first and second load transistors and the first and second drive transistors, formed on the local interconnection metal of the logic part. A metal interconnection is electrically connected to the second terminal of the first and second access transistors, the first and second load transistors and the first and second drive transistors through the contact hole, formed on the interlayer dielectric over the local interconnection metal of the logic part.
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