| 摘要 |
PURPOSE: A method for forming an MIM(Metal Insulator Metal) capacitor is provided to be capable of preventing the roughness failure of a lower electrode and improving polarity and leakage current characteristics by using the first and second nitride layer. CONSTITUTION: A lower layer(22) having a metal pattern, is formed at the upper portion of a semiconductor substrate(21). The first metal layer is deposited on the lower layer. The first nitride layer(24) is deposited on the first metal layer for improving the roughness of the first metal layer and simultaneously preventing the oxidation of the first metal layer. A dielectric layer(25), the second nitride layer(26), and the second metal layer(27) are sequentially deposited on the entire surface of the resultant structure. An upper electrode is formed by selectively patterning the second metal layer, the second nitride layer, the dielectric layer, and the first nitride layer. A lower electrode(23a) is then formed by patterning the first metal layer.
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