| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to be capable of preventing the degradation of a barrier layer due to WF6 gas when a tungsten plug is formed. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). A contact hole(24) is formed by selectively etching the interlayer dielectric. A barrier layer(25a) is formed on the contact hole. The first tungsten film(26a) is deposited on the barrier layer by PVD(Physical Vapor Deposition) and the second tungsten film(27a) is deposited by CVD, thereby entirely filling the contact hole(24). By planarizing the resultant structure, a tungsten plug is then formed.
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